Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x>0.53 for response to longer wavelengths (>1.7 mu m)
暂无分享,去创建一个
Vladimir S. Ban | Walter F. Kosonocky | G. H. Olsen | G. Olsen | W. Kosonocky | K. R. Linga | A. N. Joshi | K. Linga | V. Ban | A. Joshi
[1] G. A. Gasparian,et al. Room-Temperature InGaAs Detector Arrays For 2.5 µm , 1990, Optics & Photonics.
[2] A. Moseley,et al. High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm , 1986 .
[3] G. A. Gasparian,et al. Room-Temperature Detectors For 800-2600 nm Based On InGaAsP Alloys , 1989, Defense, Security, and Sensing.
[4] Stephen R. Forrest,et al. Evidence for tunneling in reverse‐biased III‐V photodetector diodes , 1980 .
[5] Toshitaka Torikai,et al. Ga1−yInyAs/InAsxP1−x (y>0.53, x>0) pin photodiodes for long wavelength regions (λ>2μm) grown by hydride vapour phase epitaxy , 1988 .
[6] Ramon U. Martinelli,et al. 2.6 μm InGaAs photodiodes , 1988 .
[7] D. Gay,et al. Reliability of vapor-grown planar In/sub 0.53/Ga/sub 0.47/As/InP p-i-n photodiodes with very high failure activation energy , 1988, IEEE Electron Device Letters.
[8] S. Forrest,et al. In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling , 1980 .
[9] G. Olsen,et al. Large-area and visible response VPE InGaAs photodiodes , 1983, IEEE Transactions on Electron Devices.
[10] G. A. Gasparian,et al. Room-temperature Properties Of Indium Gallium Arsenide Detectors Optimized For 1.8, 2.1, And 2.5 /spl mu/m , 1990, LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting.
[11] Seiko Mitachi,et al. Prediction of loss minima in infra-red optical fibres , 1981 .