Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x>0.53 for response to longer wavelengths (>1.7 mu m)

The dark current properties of In/sub x/Ga/sub 1-x/As photodiodes, where x is varied from 0.53 to 0.82 for extending the long wavelength cutoff from 1.7 to 2.6 mu m, are described. Detailed analyses of optoelectrical parameters of In/sub 0.82/Ga/sub 0.1/As photodiodes are presented. Dark current, which is a critical parameter and limits the operation of the photodiode, is analyzed and compared with the experimental values. Typical characteristics of photodiodes with cutoff wavelengths of 1.7 mu m (x=0.53), 2.2 mu m (x=0.72), and 2.6 mu m (x=0.82) are presented. The typical and best values of the dark currents obtained are presented. >

[1]  G. A. Gasparian,et al.  Room-Temperature InGaAs Detector Arrays For 2.5 µm , 1990, Optics & Photonics.

[2]  A. Moseley,et al.  High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm , 1986 .

[3]  G. A. Gasparian,et al.  Room-Temperature Detectors For 800-2600 nm Based On InGaAsP Alloys , 1989, Defense, Security, and Sensing.

[4]  Stephen R. Forrest,et al.  Evidence for tunneling in reverse‐biased III‐V photodetector diodes , 1980 .

[5]  Toshitaka Torikai,et al.  Ga1−yInyAs/InAsxP1−x (y>0.53, x>0) pin photodiodes for long wavelength regions (λ>2μm) grown by hydride vapour phase epitaxy , 1988 .

[6]  Ramon U. Martinelli,et al.  2.6 μm InGaAs photodiodes , 1988 .

[7]  D. Gay,et al.  Reliability of vapor-grown planar In/sub 0.53/Ga/sub 0.47/As/InP p-i-n photodiodes with very high failure activation energy , 1988, IEEE Electron Device Letters.

[8]  S. Forrest,et al.  In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling , 1980 .

[9]  G. Olsen,et al.  Large-area and visible response VPE InGaAs photodiodes , 1983, IEEE Transactions on Electron Devices.

[10]  G. A. Gasparian,et al.  Room-temperature Properties Of Indium Gallium Arsenide Detectors Optimized For 1.8, 2.1, And 2.5 /spl mu/m , 1990, LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting.

[11]  Seiko Mitachi,et al.  Prediction of loss minima in infra-red optical fibres , 1981 .