Development of Radiation-Hardened Flash-Based Field Programmable Gate Array RTG 4

The development of the first radiation hardened Flash-based field programmable gate array, RTG4, is presented and discussed. Both total ionizing dose (TID) and single event effects (SEE) are hardened primarily by design techniques and secondarily by processing: TID hardenings are applied to the Flash configuration cells and high-voltage MOSFETs; SEE hardenings are applied to fabric flip-flops, fabric SRAMs, clock distribution networks, phase lock loops (PLL), SERDES blocks, and whole chip for single event latch-up (SEL). Radiation tests to investigate the efficacy of these hardening methods are performed, and the results demonstrate satisfactory radiation performance in every aspect.