论文信息 - Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface - 字舞流文

Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface

S. Dhar | L. Feldman | Y. Sharma | Can Xu | J. Williams | E. Garfunkel | John R. Williams | A. Modic | T. Gustafsson | Yi Xu | Gang Liu | H. Lee | S. Shubeita | C. Jiao | A. Ahyi | A. Wan