Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface
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S. Dhar | L. Feldman | Y. Sharma | Can Xu | J. Williams | E. Garfunkel | John R. Williams | A. Modic | T. Gustafsson | Yi Xu | Gang Liu | H. Lee | S. Shubeita | C. Jiao | A. Ahyi | A. Wan