High growth-rate MOCVD homoepitaxial [beta]-Ga2O3 films and MOSFETs for power electronics applications
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J. Freitas | A. Osinsky | K. Hobart | R. Myers-Ward | C. Eddy | T. Anderson | N. Nepal | M. Tadjer | J. Hite | M. Mastro | E. Glaser | D. Pennachio | F. Alema | A. Mock | A. Jacobs | M. Ebrish | J. Gallagher | J. Woodward | J. Hajzus