论文信息 - Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon

Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon

Ultra-shallow junctions (USJs) were formed by low-energy As ion implantation with the subsequent furnace annealing. It was found that the significant amount of oxygen is redistributed from the silicon bulk to the arsenic-implanted region. We present the effect of oxygen gettering at the creation of arsenic-doped USJs using the marker layer created by ion implantation of 18O isotope.

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