Predictive of the quantum capacitance effect on the excitation of plasma waves in graphene transistors with scaling limit.

Plasma waves in graphene field-effect transistors (FETs) and nano-patterned graphene sheets have emerged as very promising candidates for potential terahertz and infrared applications in myriad areas including remote sensing, biomedical science, military, and many other fields with their electrical tunability and strong interaction with light. In this work, we study the excitations and propagation properties of plasma waves in nanometric graphene FETs down to the scaling limit. Due to the quantum-capacitance effect, the plasma wave exhibits strong correlation with the distribution of density of states (DOS). It is indicated that the electrically tunable plasma resonance has a power-dependent V0.8 TG relation on the gate voltage, which originates from the linear dependence of density of states (DOS) on the energy in pristine graphene, in striking difference to those dominated by classical capacitance with only V0.5 TG dependence. The results of different transistor sizes indicate the potential application of nanometric graphene FETs in highly-efficient electro-optic modulation or detection of terahertz or infrared radiation. In addition, we highlight the perspectives of plasma resonance excitation in probing the many-body interaction and quantum matter state in strong correlation electron systems. This study reveals the key feature of plasma waves in decorated/nanometric graphene FETs, and paves the way to tailor plasma band-engineering and expand its application in both terahertz and mid-infrared regions.

[1]  W. Lu,et al.  Highly Sensitive and Wide-Band Tunable Terahertz Response of Plasma Waves Based on Graphene Field Effect Transistors , 2014, Scientific Reports.

[2]  Kinam Kim,et al.  Is quantum capacitance in graphene a potential hurdle for device scaling? , 2014, Nano Research.

[3]  Yang Wang,et al.  Detection of resonant impurities in graphene by quantum capacitance measurement , 2014 .

[4]  Lei Wang,et al.  Measurement of collective dynamical mass of Dirac fermions in graphene. , 2014, Nature nanotechnology.

[5]  Xing Zhu,et al.  Active tunable absorption enhancement with graphene nanodisk arrays. , 2014, Nano letters.

[6]  F. Peeters,et al.  Plasmons and their interaction with electrons in trilayer graphene , 2013, 1401.1067.

[7]  F. Guinea,et al.  Quantum capacitance measurements of electron-hole asymmetry and next-nearest-neighbor hopping in graphene , 2013, 1309.2914.

[8]  K. Novoselov,et al.  Effect of dielectric response on the quantum capacitance of graphene in a strong magnetic field , 2013, 1307.2257.

[9]  W. Lu,et al.  The resonant tunability, enhancement, and damping of plasma waves in the two-dimensional electron gas plasmonic crystals at terahertz frequencies , 2013 .

[10]  K. T. Law,et al.  Negative Quantum Capacitance Induced by Midgap States in Single-layer Graphene , 2013, Scientific Reports.

[11]  S. Sarma,et al.  Intrinsic plasmons in two-dimensional Dirac materials , 2013, 1305.0825.

[12]  P. Ajayan,et al.  Gated tunability and hybridization of localized plasmons in nanostructured graphene. , 2013, ACS nano.

[13]  K. Novoselov,et al.  Interaction phenomena in graphene seen through quantum capacitance , 2013, Proceedings of the National Academy of Sciences.

[14]  Hongzheng Chen,et al.  Graphene-like two-dimensional materials. , 2013, Chemical reviews.

[15]  S. Haigh,et al.  Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. , 2012, Nature nanotechnology.

[16]  A. N. Grigorenko,et al.  Graphene plasmonics , 2012, Nature Photonics.

[17]  Michael S. Shur,et al.  Plasmonic terahertz lasing in an array of graphene nanocavities , 2012 .

[18]  F. Xia,et al.  Tunable infrared plasmonic devices using graphene/insulator stacks. , 2012, Nature nanotechnology.

[19]  Jun Wang,et al.  Plasmon resonant excitation in grating-gated AlN barrier transistors at terahertz frequency , 2012 .

[20]  Lianmao Peng,et al.  Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage. , 2011, ACS Nano.

[21]  A. Bostwick,et al.  Effective screening and the plasmaron bands in Graphene. , 2011, 1107.4398.

[22]  O. Gamayun.  Dynamical screening in bilayer graphene , 2011, 1103.4597.

[23]  Lianmao Peng,et al.  Quantum capacitance limited vertical scaling of graphene field-effect transistor. , 2011, ACS nano.

[24]  A. Morpurgo,et al.  Accessing the transport properties of graphene and its multilayers at high carrier density , 2010, Proceedings of the National Academy of Sciences.

[25]  S. Sarma,et al.  Dynamic screening and low-energy collective modes in bilayer graphene , 2010, 1006.3078.

[26]  S. Louie,et al.  Observation of carrier-density-dependent many-body effects in graphene via tunneling spectroscopy. , 2010, Physical review letters.

[27]  Yuyuan Tian,et al.  Measurement of the quantum capacitance of graphene. , 2009, Nature nanotechnology.

[28]  E. H. Hwang,et al.  Screening-induced temperature-dependent transport in two-dimensional graphene , 2008, 0811.1212.

[29]  L. Brey,et al.  Electronic structure of gated graphene and graphene ribbons , 2007 .

[30]  Burke,et al.  Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.

[31]  M. Shur,et al.  Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid , 1996 .

[32]  S. Luryi.  Quantum capacitance devices , 1988 .

[33]  R. Laughlin.  Anomalous quantum Hall effect: An incompressible quantum fluid with fractionally charged excitations , 1983 .