Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates
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G. Simin | M.E. Muir | I. Adesida | V. Kumar | M.A. Khan | J. Yang | G. Simin | I. Adesida | A. Kuliev | V. Kumar | R. Schwindt | M.A. Khan | J.W. Yang | A. Kuliev | M. Muir | R.S. Schwindt
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