The behavior of junction-gate field-effect transistors beyond pinchoff
暂无分享,去创建一个
[1] W. Shockley,et al. A Unipolar "Field-Effect" Transistor , 1952, Proceedings of the IRE.
[2] H. Ruegg,et al. Measurement of the drift velocity of holes in silicon at high-field strengths , 1967 .
[3] J. F. Gibbons,et al. Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique , 1967 .
[4] R. R. Bockemuehl. Analysis of field effect transistors with arbitrary charge distribution , 1963 .