论文信息 - Cathodoluminescence of oval defects in GaAs/AlxGa1–xAs epilayers using an optical fiber light collection system

Cathodoluminescence of oval defects in GaAs/AlxGa1–xAs epilayers using an optical fiber light collection system

A cathodoluminescence system using a novel optical fiber light collection system is employed to study oval defects in GaAs/Alx Ga1−x As epilayers grown by molecular beam epitaxy. Spatially and spectrally resolved data on the luminescence of oval defects are presented. Oval defects are found to contain an enhanced concentration of gallium, which is consistent with current theories regarding the origin of these defects.

K. Vahala | M. Hoenk

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