Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells
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C. Ballif | J. Horzel | M. Despeisse | F. Haug | P. Wyss | J. Stuckelberger | G. Nogay | C. Allébe | A. Ingenito | P. Löper | Luca Gnocchi