Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs

Simulations of hot-carrier degradation of nanowire field-effect transistors are reported. The simulations rely on the carrier energy distribution function, obtained by solving the Boltzmann transport equation. To model the contribution of impact ionization, the hydrodynamic scheme is employed. A range of pertinent physical mechanisms is invoked and discussed to adequately reproduce HCD measurements in the full ($V_{\mathrm{g}}, V_{\mathrm{d}}$) bias space. Impact ionization is discussed as an important ingredient of HCD at low gate, high drain voltages.

[1]  H. Mertens,et al.  Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[2]  N. Horiguchi,et al.  Complete extraction of defect bands responsible for instabilities in n and pFinFETs , 2016, 2016 IEEE Symposium on VLSI Technology.

[3]  Dimitri Linten,et al.  Self-heating-aware CMOS reliability characterization using degradation maps , 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

[4]  Karl Hess,et al.  The effects of a multiple carrier model of interface trap generation on lifetime extraction for MOSFETs , 2002 .

[5]  T. Grasser,et al.  Modeling of hot-carrier degradation: Physics and controversial issues , 2012, 2012 IEEE International Integrated Reliability Workshop Final Report.

[6]  Tibor Grasser,et al.  Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET , 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

[7]  G. Rzepa,et al.  Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[8]  H. Mertens,et al.  Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates , 2016, 2016 IEEE Symposium on VLSI Technology.

[9]  Vincent Huard,et al.  General framework about defect creation at the Si∕SiO2 interface , 2009 .

[10]  Karl Rupp,et al.  Predictive Hot-Carrier Modeling of n-Channel MOSFETs , 2014, IEEE Transactions on Electron Devices.

[11]  Anisur Rahman,et al.  Reliability studies of a 10nm high-performance and low-power CMOS technology featuring 3rd generation FinFET and 5th generation HK/MG , 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

[12]  Tibor Grasser,et al.  Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs , 2016, IEEE Electron Device Letters.

[13]  Naoto Horiguchi,et al.  Complete degradation mapping of stacked gate-all-around Si nanowire transistors considering both intrinsic and extrinsic effects , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[14]  Antonio Gnudi,et al.  Characterization and modeling of electrical stress degradation in STI-based integrated power devices , 2014 .

[15]  X. Garros,et al.  Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating , 2016, 2016 IEEE Symposium on VLSI Technology.

[16]  B. Kaczer,et al.  Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[17]  Naoto Horiguchi,et al.  On the ballistic ratio in 14nm-Node FinFETs , 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

[18]  M. Agostinelli,et al.  Transistor aging and reliability in 14nm tri-gate technology , 2015, 2015 IEEE International Reliability Physics Symposium.

[19]  Dimitri Linten,et al.  Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs , 2018, 2018 International Integrated Reliability Workshop (IIRW).

[20]  S. Selberherr,et al.  Influence of the distribution function shape and the band structure on impact ionization modeling , 2001 .