Stacked BSCR ESD protection for 250V tolerant circuits

A device level solution for on-chip ESD protection for high-voltage applications is reported. Using technology CAD, a new stacked bipolar-triggered SCR device architecture is proposed and further validated by experimental measurements in a 250 V complementary BJT process.

[1]  A. Concannon,et al.  Comparison of ESD protection capability of lateral BJT, SCR and bidirectional. SCR for hi-voltage BiCMOS circuits , 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

[2]  V.A. Vashchenko,et al.  Implementation of 60V tolerant dual direction ESD protection in 5V BiCMOS process for automotive application , 2004, 2004 Electrical Overstress/Electrostatic Discharge Symposium.

[4]  V.A. Vashchenko,et al.  High performance SCRs for on-chip ESD protection in high voltage BCD processes , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

[5]  A. Amerasekera,et al.  Bipolar SCR ESD protection circuit for high speed submicron bipolar/BiCMOS circuits , 1995, Proceedings of International Electron Devices Meeting.