Is there experimental evidence for a difference between surface and bulk impact ionization in silicon?

In previous works a difference between surface (MOS devices) and bulk (bipolar devices) impact ionization (II) has been found. It is shown that this difference is the result of inadequate II models used to interpret the experimental data and not due to unknown or new physical effects in MOS devices. Utilizing a Full Band Monte Carlo program experimental results for bulk systems and MOS devices are reproduced without assuming a difference between surface and bulk II.

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