A W-band constructive wave oscillator in 130-nm SiGe BiCMOS

In this paper we present a deterministic W-band constructive-wave oscillator (CWO) designed and simulated in 130-nm SiGe BiCMOS. A six-section CWO produces 95 GHz multi-phase oscillation signals that are distributed along the ring with 60 degree phases. The CWO circuit occupies a total area of 0.59 mm × 0.53 mm and dissipates 67 mW from a 2V supply. The six-phase CWO operating at 95 GHz has −10 dBm output power into 50 ohm load with a phase noise of −81 dBc per Hz at 1 MHz offset.

[1]  Zhijian Xie,et al.  Modeling coupled lines in 65 nm CMOS for millimeter-wave applications , 2014, IEEE SOUTHEASTCON 2014.

[2]  Joohwa Kim,et al.  Cascaded Constructive Wave Amplification , 2010, IEEE Transactions on Microwave Theory and Techniques.

[3]  James F. Buckwalter,et al.  A 92-GHz deterministic quadrature oscillator and N-push modulator in 120-nm SiGe BiCMOS , 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

[4]  Zhijian Xie,et al.  Design of 110–152 GHz rotary traveling wave oscillators in 65 nm CMOS technology , 2014, IEEE SOUTHEASTCON 2014.

[5]  Patrick Roblin,et al.  Study of amplification stage limitation of rotary traveling wave oscillators , 2013, 2013 IEEE International Wireless Symposium (IWS).

[6]  S. Lipa,et al.  Rotary traveling-wave oscillator arrays: a new clock technology , 2001 .

[7]  R. Weigel,et al.  SIMULATION AND DESIGN OF RF OSCILLATORS , 2004 .