Effect of high-energy neutrons on MuGFETs

This paper investigates, for the first time. the influence of high-energy neutrons on Multiple-Gate FETs (MuGFETs) with various gate lengths and fin widths Neutron-induced degradation is addressed through the variation of major device parameters such as threshold voltage, subthreshold slope, maximum transconductance and DIBL We demonstrate that high-energy neutrons result in total-dose effects largely similar to those caused by gamma- and proton-irradiations It is shown that, contrarily to the generally-believed immunity to irradiation, very short-channel MuGFETs can become extremely sensitive to the total-dose effect. The possible reasons of such length-dependent neutron-induced degradation are discussed and finally related to gate edges (C) 2009 Elsevier Ltd All rights reserved

[1]  V. D. Sevast’yanov,et al.  Determination of the Neutron Energy Spectrum in a Fast-Reactor Core , 2002 .

[2]  O. Faynot,et al.  Total Ionizing Dose Effects on Triple-Gate FETs , 2006, IEEE Transactions on Nuclear Science.

[3]  Jean-Pierre Colinge,et al.  Dose radiation effects in FinFETs , 2006 .

[4]  Ricardo Reis,et al.  Radiation Effects on Embedded Systems , 2010 .

[5]  V. Kilchytska,et al.  Frequency Variation of the Small-Signal Output Conductance of Decananometer MOSFETs Due to Substrate Crosstalk , 2007, IEEE Electron Device Letters.

[6]  H. Kameyama,et al.  SEALER: Novel Monte-Carlo Simulator for Single Event Effects of Composite-Materials Semiconductor Devices , 2005, 2005 8th European Conference on Radiation and Its Effects on Components and Systems.

[7]  G. C. Messenger,et al.  The effects of radiation on electronic systems , 1986 .

[8]  A framework for understanding fast-neutron induced defects in SiO2 MOS structures , 1992 .

[9]  Stefano Agosteo,et al.  First Evaluation of Neutron Induced Single Event Effects on the CMS Barrel Muon Electronics , 2000 .

[10]  Andrew Holmes-Siedle,et al.  Handbook of Radiation Effects , 1993 .

[11]  A. N. Chandorkar,et al.  Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitors , 2002 .

[12]  Denis Flandre,et al.  FinFETs perspectives for high-temperature applications , 2007 .

[13]  O. Faynot,et al.  Total ionizing dose effects on deca-nanometer fully depleted SOI devices , 2005, IEEE Transactions on Nuclear Science.

[14]  R C Singleterry,et al.  Measurement of the energy spectrum of cosmic-ray induced neutrons aboard an ER-2 high-altitude airplane. , 2002, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment.

[15]  A. Paccagnella,et al.  Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs , 2008, IEEE Transactions on Nuclear Science.

[16]  Jean-Pierre Colinge,et al.  Effects of total-dose irradiation on gate-all-around (GAA) devices , 1993 .

[17]  Elmer E Lewis,et al.  Fundamentals of Nuclear Reactor Physics , 2008 .

[18]  B. Vuković,et al.  Some cosmic radiation dose measurements aboard flights connecting Zagreb Airport. , 2008, Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine.

[19]  D. Flandre,et al.  Substrate Bias Effect Linked to Parasitic Series Resistance in Multiple-Gate SOI MOSFETs , 2007, IEEE Electron Device Letters.

[20]  P. Winokur,et al.  Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .

[21]  G. Zebrev.  Modeling neutron ionization effects on high-density CMOS circuit elements , 2006 .

[22]  A. Nazarov.  Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs , 2005 .

[23]  M. Rosmeulen,et al.  Experimental evidence of short-channel electron mobility degradation caused by interface charges located at the gate-edge of triple-gate FinFETs , 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

[24]  G. Knoblinger,et al.  Radiation Dose Effects in Trigate SOI MOS Transistors , 2006, IEEE Transactions on Nuclear Science.

[25]  S. Duzellier,et al.  Test Facilities for SEE and Dose Testing , 2007 .

[26]  N. Collaert,et al.  Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices , 2007, IEEE Transactions on Nuclear Science.

[27]  Takashi S. Nakamura,et al.  Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices , 2008 .

[28]  Paul Zimmerman,et al.  Tall triple-gate device with TiN/HfO2 gate stack , 2005 .