Configuration ofJI-LIGBTforOver100kHzSwitching

We haveinvestigated intofollowing measures to improve theswitching performance ofL-IGBT. 1. Passive PMOS. 2. N+layer inside a p-type collector. 3. Waferthinning. In particular, waferthinning hasbroughtremarkable improvement ofswitching performance on L-IGBTas the passive PMOS thatwe hadproposed. Furthermore, we have fabricated a prototype IPD(Intelligent PowerDevice) thatwe applied these measures,anda flyback converter controlled by theIPDhaswelldemonstrated 150kHzoperation.

[1]  M. Sweet,et al.  Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

[2]  Akio Nakagawa,et al.  500V three phase inverter ICs based on a new dielectric isolation technique , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.