Characterization of two‐dimensional dopant profiles: Status and review

The National Technology Roadmap for Semiconductors calls for development of two‐ and three‐dimensional dopant profiling methods for calibration of technology computer‐aided design process simulators. We have previously reviewed 2D dopant profiling methods. In this article, we briefly review methods used to characterize etched transistor cross sections by expanding our previous discussion of scanned probe microscopy methods. We also mention the need to participate in our ongoing comparison of analysis results for test structures that we have provided the community.