Radiative emission properties of a-SiN : H based nanometric multilayers for light emitting devices

[1]  E. Tresso,et al.  Photoluminescence and electroluminescence properties of a-Si1−xNx:H based superlattice structures , 1998 .

[2]  T. Sawada,et al.  Stretched-exponential decay of the luminescence in ZnSeZnTe superlattices , 1998 .

[3]  E. Tresso,et al.  Structural properties of a-Si1−xNx:H films grown by plasma enhanced chemical vapour deposition by SiH4 + NH3 + H2 gas mixtures , 1997 .

[4]  F. Giorgis.  Optical and photoluminescence properties of a-Si1-xNx:H/a-Si3N4:H and a-Si1-xCx:H/a-SiC:H superlattices , 1997 .

[5]  M. Yamaguchi,et al.  Interface defects and their roles in light-induced phenomena in a-Si:H/a- Si 1 − x N x :H multilayers , 1997 .

[6]  Solomon,et al.  Photoluminescence of tetrahedrally coordinated a-Si1-xCx:H. , 1995, Physical review. B, Condensed matter.

[7]  S. Panyakeow,et al.  Visible thin film light emitting diode using a-SiN:H/a-SiC:H heterojunctions , 1993 .

[8]  W. A. Jackson,et al.  Static versus electron-phonon disorder in amorphous Si: H and its alloys , 1989 .

[9]  K. Morigaki,et al.  Electron-Hole Recombination in a-Si:H/ a-Si1-xNx:H Superlattices as Elucidated by Time-Resolved Luminescence and Optically Detected Magnetic Resonance Measurements , 1988 .

[10]  W. C. Wang,et al.  Time resolved photoluminescence in a-Si : H: A comparison between single layers and superlattices , 1987 .

[11]  Y. Hamakawa,et al.  Visible-Light Injection-Electroluminescent a-SiC/p-i-n Diode , 1985 .

[12]  Brooks,et al.  Energy transport and size effects in the photoluminescence of amorphous-germanium/amorphous-silicon multilayer structures. , 1985, Physical review letters.

[13]  C. D. Gelatt,et al.  Photoluminescence in a disordered insulator: The trapped-exciton model , 1982 .