Comparative study of vertical GAA TFETs and GAA MOSFETs in function of the inversion coefficient

In this work, a comparative study between vertical silicon GAA TFETs and silicon GAA MOSFETs was realized, focusing on relevant analog parameters, as transistor efficiency, Early voltage, intrinsic voltage gain, unity gain frequency, and the product of the transistor efficiency multiplied by the unity gain frequency. The key parameter of comparison is the inversion coefficient (IC). The analysis was performed considering the different conduction regimes (weak, moderate and strong). MOSFETs have presented a higher transistor efficiency and a lower value of Early voltage in comparison with TFETs. In contrast, the latter technology presents a higher intrinsic voltage gain for the whole range of extracted ICs. Some other figures of merits, as the unity gain frequency and the product of the unity gain frequency and the transistor efficiency were obtained. A plateau was observed for the MOSFETs, but the TFETs transconductance and product only increase with the gate voltage.