Statistical investigation of the impact of program history and oxide-metal interface on OxRRAM retention
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G. Groeseneken | R. Degraeve | L. Goux | A. Fantini | A. Redolfi | C.Y. Chen | G S. Kar
[1] C. Y. Chen,et al. Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM , 2016, IEEE Electron Device Letters.