Resolution-Limit Study of Chain-Structure Negative Resist by Electron Beam Lithography

We found that low-molecular-weight polystyrene with a chain structure acts as a 10-nm-level high-resolution negative resist in electron beam lithography. The resolution limit is proportion to the molecular weight of the polystyrene resist. The size of the polystyrene resist dot patterns which can be formed decreased with decreasing molecular weight of the polystyrene. Dot patterns of nearly 10 nm in diameter can be formed by a polystyrene resist with a molecular weight of 800.