论文信息 - Evaluation of ohmic contacts to p-type 6H-SiC created by C and Al coimplantation

Evaluation of ohmic contacts to p-type 6H-SiC created by C and Al coimplantation

A comparative study of specific contact resistance and sheet resistivity of p-type 6H-SiC created by Al implantation only and by C and Al coimplantation into n/sup -/-6H-SiC epilayer grown on n/sup +/-6H-SiC has been performed to address the challenging issue of ohmic contacts to the anode of SiC thyristors and other thyristor-based advanced devices. Direct experimental evidence has been obtained which shows the obvious advantage of C and Al coimplantation in terms of contact resistance and sheet resistivity. Under our experimental conditions, it is found that the specific contact resistance can be reduced by three orders of magnitude and the sheet resistivity can be improved by a factor of 6 when C and Al are coimplanted into 6H-SiC.

[1] M. V. Rao,et al. Al, Al/C and Al/Si implantations in 6H-SiC , 1996 .

[2] H. Matsunami,et al. Aluminum and boron ion implantations into 6H-SiC epilayers , 1996 .

[3] Peter A. Barnes,et al. Contact resistance measurements on p‐type 6H‐SiC , 1993 .

[4] M. Ghezzo,et al. Nitrogen-implanted SiC diodes using high-temperature implantation , 1992, IEEE Electron Device Letters.

[5] M. V. Rao,et al. Elevated temperature nitrogen implants in 6H-SiC , 1996 .

[6] Philip G. Neudeck,et al. Progress in silicon carbide semiconductor electronics technology , 1995 .

[7] M. V. Rao,et al. Al and B ion‐implantations in 6H‐ and 3C‐SiC , 1995 .

[8] T. Kimoto,et al. Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes , 1995 .

[9] D. Widmann,et al. Current crowding on metal contacts to planar devices , 1969 .

[10] H. Morkoç,et al. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies , 1994 .

[11] J. Schneider,et al. Point defects in silicon carbide , 1993 .