A SPICE-Compatible Model for a Gate/Body-Tied PMOSFET Photodetector With an Overlapping Control Gate

Abstract A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is pre-sented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photo-current. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking.This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hy briddevice composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are basedon complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate forsimulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping controlgate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a 0.35µm two-poly, four-metal standardcomplementary MOS (CMOS) process, and its characteristics are evaluated.Keywords: High-sensitivity, Gate/body-tied photodetector, SPICE model

[1]  Geoffrey W. Taylor,et al.  Electrical and optical switching characteristics of the single-quantum-well DOES laser , 1992 .

[2]  Kenji Taniguchi,et al.  High-Sensitivity SOI MOS Photodetector with Self-Amplification , 1996 .

[3]  S.K.H. Fung,et al.  Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate , 1998, IEEE Electron Device Letters.

[4]  M. Deen,et al.  Fully Integrated Single Photon Avalanche Diode Detector in Standard CMOS 0.18- $\mu$m Technology , 2008, IEEE Transactions on Electron Devices.

[5]  E. Vittoz MOS transistors operated in the lateral bipolar mode and their application in CMOS technology , 1983, IEEE Journal of Solid-State Circuits.

[6]  H. C. de Graaff,et al.  MODELLA-a new physics-based compact model for lateral p-n-p transistors , 1992 .

[7]  Keiichiro Kagawa,et al.  Pulse modulation CMOS image sensor for bio-fluorescence imaging applications , 2005, 2005 IEEE International Symposium on Circuits and Systems.

[8]  Manoj Sachdev,et al.  A sub-0.5 V dynamic threshold PMOS (DTPMOS) scheme for bulk CMOS technologies , 2001, ICM 2001 Proceedings. The 13th International Conference on Microelectronics..

[9]  Jang-Kyoo Shin,et al.  Dynamic range extension of the n-well/gate-tied PMOSFET-type photodetector with a built-in transfer gate , 2010 .

[10]  R. Etienne-Cummings,et al.  Which Photodiode to Use: A Comparison of CMOS-Compatible Structures , 2009, IEEE Sensors Journal.

[11]  Young June Park,et al.  A novel bipolar imaging device - BASIC (BAse stored imager in CMOS Process) , 2003 .

[12]  Y. Maruyama,et al.  An all-digital, time-gated 128X128 spad array for on-chip, filter-less fluorescence detection , 2011, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.

[13]  Jang-Kyoo Shin,et al.  Highly Sensitive Gate/Body-Tied P-Channel Metal Oxide Semiconductor Field Effect Transistor-Type Photodetector with an Overlapping Control Gate , 2012 .

[14]  M.J. Deen,et al.  The dynamic threshold voltage MOSFET , 2000, Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474).

[15]  Jeffrey Bokor,et al.  Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI , 1997 .

[16]  Jang-Kyoo Shin,et al.  Modeling of Gate/Body-Tied PMOSFET Photodetector with Built-in Transfer Gate , 2014 .

[17]  I. Kidron,et al.  Integrated circuit model for lateral PNP transistors including isolation junction interactions , 1971 .