Exploration of linear and non-linear double exposure techniques by simulation

In this work, a framework for the assessment of different double exposure techniques is laid out. Both the simulation environment and the utilized models, derived from well-established resist models, are discussed. Numerous simulation results are evaluated to investigate strengths and weaknesses of different double exposure approaches. Non-linear superposition techniques are examined in respect of their process performance for both standard and sub 0.25 k1 values. In addition to a study of these effects in the scope of basic layouts, an application to interference-assisted lithography (IAL) is proposed and discussed.

[1]  H. Binder,et al.  Modeling and simulation of a chemically amplified DUV resist using the effective acid concept , 1995 .

[2]  Soichi Inoue,et al.  Contact hole formation by multiple exposure technique in ultralow k 1 lithography , 2005 .

[3]  Yulia O. Korobko,et al.  Resolution limits with 248-nm strong phase-shifting techniques for contact patterning applications , 1998, Photomask Technology.

[4]  Andreas Erdmann,et al.  Rigorous diffraction analysis for future mask technology , 2000, Advanced Lithography.

[5]  Martha I. Sanchez,et al.  Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance , 1998 .

[6]  Cheng-Bai Xu,et al.  Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios , 2008, SPIE Advanced Lithography.

[7]  Peter Evanschitzky,et al.  Extended Abbe approach for fast and accurate lithography imaging simulations , 2009, European Mask and Lithography Conference.

[8]  Andreas Erdmann,et al.  Fast near field simulation of optical and EUV masks using the waveguide method , 2007, European Mask and Lithography Conference.

[9]  N. Turro,et al.  Double Exposure Materials: Simulation Study of Feasibility , 2007 .

[10]  Theodore H. Fedynyshyn,et al.  Hybrid optical maskless lithography: Scaling beyond the 45nm node , 2005 .

[11]  Andrew B. Kahng,et al.  32nm 1-D regular pitch SRAM bitcell design for interference-assisted lithography , 2008, Photomask Technology.

[12]  Michael C. Smayling,et al.  Interference assisted lithography for patterning of 1D gridded design , 2009, Advanced Lithography.

[13]  P. Brooker,et al.  High-throughput hybrid optical maskless lithography: all-optical 32-nm node imaging , 2005, SPIE Advanced Lithography.

[14]  Harry J. Levinson,et al.  Application of contrast enhancement layer to 193nm lithography , 2007 .

[15]  Soichi Inoue,et al.  Ultralow k 1 oxide contact hole formation and metal filling using resist contact hole pattern by double line and space formation method , 2008 .

[16]  Soichi Inoue,et al.  Contact hole formation by multiple exposure technique in ultralow-k1 lithography , 2004, SPIE Advanced Lithography.

[17]  W.G. Oldham.  The use of contrast enhancement layers to improve the effective contrast of positive photoresist , 1987, IEEE Transactions on Electron Devices.

[18]  Todd L. Veldhuizen,et al.  Arrays in Blitz++ , 1998, ISCOPE.

[19]  Peter De Bisschop,et al.  Validity of the Hopkins approximation in simulations of hyper-NA (NA>1) line-space structures for an attenuated PSM mask , 2006, SPIE Advanced Lithography.