Ultra Thin Nitride Gate MISFET Operating with Tunneling Gate Current

INTRODUCTION A nitride film is regarded as a possible candidate for the ultra-thin gate insulator material in ttre next generation MISFET [1-5], because some siliconnitride films have a low defect density, compared with that for silicon-oxide films, and the nitride film has a higher permittivity, which increases MISFET drivability. At the same time, very thin nitride films show larger tunnel leakage current, due to their smaller ba:rier height. In this paper, the electrical characteristics for ultra-thin nitride gate MISFETs are demonstrated. In addition, tunneling gate leakage current effects on the electric characteristics are