Oxidation behaviour of double layers of TiSi2 on polycrystalline silicon

Abstract The oxidation of TiSi2 on Si(100) and on polycrystalline silicon films in H2O-O2 and dry O2 was studied in the temperature range 700–1050°C. The same mechanism was found for both types of structures. As in the case of the oxidation of silicon the reaction may be described by a linear-parabolic two-step model. In the initial phase of the process the rate is limited by the reaction at the TiSi2-oxide interface, and later by the diffusion of the oxidant to the interface. Only during the first stage may small amounts of TiO2 be formed. Contamination of the starting surface by TiO2 is most probably responsible for the conflicting results reported in the literature.