Silicon RF-GCMOS IC technology for RF mixed-mode wireless applications

A submicron silicon Radio Frequency Graded-Channel MOS (RF-GCMOS) IC technology has been developed for wireless communication applications. The technology is based on a low power, low cost GCMOS VLSI technology with fully integrated passive components and optimized GC-MOSFETs for RF mixed-mode operations. For the first time, excellent RF and mixed-mode performance is demonstrated by the highly integrated RF GCMOS technology. The results show that this technology is most promising for battery-powered system-on-a-chip applications.