Jet-printed Fabrication of a-Si:H Thin-film Transistors and Arrays

Phase-change wax-based printed masks were used to fabricate a-Si:H thin-film transistors (TFTs) in place of conventional lithography. Wax-mask features with a minimum feature size of ∼20 [.proportional]m was achieved using an acoustic-ink-printing process. Bottom-gate TFTs with source-drain contacts overlapping the channel were created using a four-mask process. The TFTs have I-V characteristics comparable to photolithographically patterned devices, with mobility of 0.6-1 cm 2 /V·s, threshold voltage of 2-3 V, and on/off ratios exceeding 10 7 , for devices with channel lengths below 50[.proportional]m.