Laser doping for selective emitter solar cells

Selective emitter solar cells were fabricated with a reduced number of technological steps. Laser doping is often discussed in relation to silicon photovoltaic cell efficiency enhancement. In this paper, we present results of the development of a selective emitter structure for multicrystalline silicon solar cells suitable for industrial mass production. A pulsed laser is used to obtain highly doped regions that will receive the screen printed silver grid. Therefore, we designed using solidworks software a single type of pattern for square cells (multicrystalline silicon). We resolved the problem of grid mismatch between the laser pattern and metallic grid. Observation of laser treatment surface shows the perfect continuity of the lines and good flatness of the edge of finger and bus bar.