Modelling on GaN Power HEMT with Condideration of Subthreshold Swing Using Artificial Intelligence Technology

In this paper, we report a model to AlGaN/GaN power HEMT based on the artificial intelligence (AI) technology, wherein the model focuses on the subthreshold swing of the device. Verified by the modelling results, the proposed model matches the experimental data very well in both subthreshold region and linear region, suggesting its potential in power electronics application such as converter design.