On growth mechanisms and dynamic simulation of growth process based on the experimental results of nanowire growth by VLS method on semiconductor substrates

Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road,Cau Giay District, Hanoi, Viet Nam; Physics Department, Geo and Mining University, Tu Liem, Ha Noi,Viet Nam; Faculty of Materials Science and Technology, Hanoi University of Technology, 1 Dai Co VietRoad, Hai Ba Trung District, Hanoi, Viet Nam; Tohoku University, Japan Abstract: Recently the production of nanowires is attracting many scientists but it also holds manychallenges. Many problems including growth mechanisms are still not understood clearly. This paper willshow briefly some our experiment results of nanowires (GeO2 and Ga2O3) growth by VLS, the rest of thepaper will discuss nanowire growth mechanisms and then showing a developed programme on PC fordynamic simulation of nanowire growth process. This running simulation software for nanowires growthprocess has contained main mechanisms and we can see directly some physical phenomena concerninggrowth process by VLS method. © 2009 IOP Publishing Ltd. Author Keywords: Dynamic simulation of growing nanowires; GeO2 and Ga2O3 nanowires; Growthmechanisms; VLS method Year: 2009 Source title: Journal of Physics: Conference Series Volume: 187 Art. No.: 12052 Link: Scorpus Link Correspondence Address: An, D. K.; Institute of Materials Science, Vietnam Academy of Science andTechnology, 18 Hoang Quoc Viet Road, Cau Giay District, Hanoi, Viet Nam; email: andk@ims.vast.ac.vn ISSN: 17426588 DOI: 10.1088/1742-6596/187/1/012052 Language of Original Document: English Abbreviated Source Title: Journal of Physics: Conference Series Document Type: Article Source: Scopus Authors with affiliations: