Highly linear receiver front-end adopting MOSFET transconductance linearization by multiple gated transistors

Highly linear receiver RF front-end adopting MOSFET transconductance linearization by linearly superposing several common-source FET transistors in parallel (multiple gated transistor, or MGTR), combined with some additional circuit techniques are reported. In MGTR circuitry, linearity is improved by using transconductance linearization which can be achieved by canceling the negative peak value of g/sub m/'' of the main transistor with the positive one in the auxiliary transistor having a different size and gate drive combined in parallel. This enhancement, however, is limited by the distortion originated from the combined influence of g/sub m/' and harmonic feedback, which can greatly be reduced by the cascoding MGTR output for the amplifier and by the tuned load for the mixer. Experimental results designed using the above techniques show IIP/sub 3/ improvements at given power consumption by as much as 10 dB for CMOS low-noise amplifier at 900 MHz and 7 dB for Gilbert cell mixer at 2.4 GHz without sacrificing other features such as gain and noise figure.

[1]  Ihn S. Kim,et al.  Microstrip Posts and Dielectric Resonators Showing a Steep Slope at Lower and Upper Stopbands for , 2000 .

[2]  D. G. Haigh,et al.  Control of circuit distortion by the derivative superposition method [MMIC amplifier] , 1996 .

[3]  Keng Leong Fong.  High-frequency analysis of linearity improvement technique of common-emitter transconductance stage using a low-frequency-trap network , 2000, IEEE Journal of Solid-State Circuits.

[4]  Tanaka,et al.  A Linearization Technique For CMOS RF Power Amplifiers , 1997, Symposium on VLSI Circuits.

[5]  B. Gilbert,et al.  The MICROMIXER: a highly linear variant of the Gilbert mixer using a bisymmetric Class-AB input stage , 1997, IEEE J. Solid State Circuits.

[6]  Barrie Gilbert,et al.  The multi-tanh principle: a tutorial overview , 1998, IEEE J. Solid State Circuits.

[7]  Jacques C. Rudell,et al.  A 1.9-GHz wide-band IF double conversion CMOS receiver for cordless telephone applications , 1997, IEEE J. Solid State Circuits.

[8]  E. Zeisel,et al.  A highly-integrated tri-band/quad-mode SiGe BiCMOS RF-to-baseband receiver for wireless CDMA/WCDMA/AMPS applications with GPS capability , 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).

[9]  B. Kim,et al.  Highly linear CMOS RF MMIC amplifier using multiple gated transistors and its Volterra series analysis , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[10]  Beom-Kyu Ko,et al.  A nightmare for CDMA RF receiver: the cross modulation , 1999, AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360).

[11]  Ilku Nam,et al.  An experimental coin-sized radio for extremely low-power WPAN (IEEE 802.15.4) application at 2.4 GHz , 2003 .

[12]  Kwyro Lee,et al.  A new linearization technique for MOSFET RF amplifier using multiple gated transistors , 2000 .

[13]  Ilku Nam,et al.  A single-chip 2.4GHz low-power CMOS receiver and transmitter for WPAN applications , 2003, Radio and Wireless Conference, 2003. RAWCON '03. Proceedings.

[14]  Kwyro Lee,et al.  A comparative study on the various monolithic low noise amplifier circuit topologies for RF and microwave applications , 1996 .

[15]  Kwyro Lee,et al.  A new simultaneous noise and input power matching technique for monolithic LNA's using cascode feedback , 1997 .

[16]  Kwyro Lee,et al.  A Simple and Analytical Design Approach for Input Power Matched On-chip CMOS LNA , 2002 .

[17]  Behzad Razavi,et al.  RF Microelectronics , 1997 .

[18]  V. Aparin,et al.  Effect of out-of-band terminations on intermodulation distortion in common-emitter circuits , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

[19]  E. Abou-Allam,et al.  Low-voltage 1.9-GHz front-end receiver in 0.5-μm CMOS technology , 2001, IEEE J. Solid State Circuits.