Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (γ) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10 nm
暂无分享,去创建一个
T. Hiramoto | J. Ida | T. Ohtou | Y. Nagatomo | Y. Doumae | T. Saraya | K. Shimokawa
[1] Vivek De,et al. Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage , 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
[2] Toshiro Hiramoto,et al. Future Electron Devices and SOI Technology ?Semi-Planar SOI MOSFETs with Sufficient Body Effect? , 2003 .
[3] T. Fujita,et al. A 0.9 V 150 MHz 10 mW 4 mm/sup 2/ 2-D discrete cosine transform core processor with variable-threshold-voltage scheme , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.
[4] Toshiro Hiramoto,et al. Enhancement of adjustable threshold voltage range by substrate bias due to quantum confinement in ultrathin body SOI pMOSFETs , 2003 .
[5] Dimitri A. Antoniadis,et al. Back-gated CMOS on SOIAS for dynamic threshold voltage control , 1997 .
[6] Toshiro Hiramoto,et al. Variable Body Effect Factor Fully Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistor for Ultra Low-Power Variable-Threshold-Voltage Complementary Metal Oxide Semiconductor Applications , 2004 .