Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers

[1]  M. Melloch,et al.  SiC power Schottky and PiN diodes , 2002 .

[2]  Tangali S. Sudarshan,et al.  Design rules for field plate edge termination in SiC Schottky diodes , 2001 .

[3]  Maurice Weiner,et al.  Inductively-loaded half-bridge inverter characterisation of 4H-SiC Merged PiN/Schottky diodes up to 230 A and 250°C , 2001 .

[4]  K. Satoh,et al.  The present state of the art in high-power semiconductor devices , 2001, Proc. IEEE.

[5]  Bantval J. Baliga,et al.  The future of power semiconductor device technology , 2001, Proc. IEEE.

[6]  D. Kinzer,et al.  The semiconductor roadmap for power management in the new millennium , 2001, Proc. IEEE.

[7]  John D. Cressler,et al.  Design and fabrication of planar guard ring termination for high-voltage SiC diodes , 2000 .

[8]  J. Palmour,et al.  Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities , 1999 .

[9]  Ronald J. Gutmann,et al.  Design considerations and experimental analysis for silicon carbide power rectifiers , 1999 .

[10]  K. Shenai,et al.  Performance evaluation of high-power wide band-gap semiconductor rectifiers , 1999 .

[11]  Anant K. Agarwal,et al.  4H-SiC power devices for use in power electronic motor control , 1998 .

[12]  M. Melloch,et al.  Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers , 1998 .

[13]  K. Kano.  Semiconductor Devices , 1997 .

[14]  Peter Friedrichs,et al.  Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance , 1997 .

[15]  Steven T. Peake,et al.  Power semiconductor devices , 1995 .

[16]  Bantval J. Baliga,et al.  Modelling the turn-off characteristics of the base resistance controlled thyristor (BRT) , 1995 .

[17]  C. Harris,et al.  Recent developments in SiC device research , 1999 .