Annealing-insensitive “black silicon” with high infrared absorption

A black silicon structure with high-aspect-ratio surface spikes was designed and fabricated in vacuum, resulting in absorptance >90% over the range of 200–2500 nm. It is demonstrated that annealing, an essential step in the fabrication of semiconductor devices, has almost no effect on the infrared absorption of this material, while the infrared absorption of an identical structure fabricated in a SF6 drops dramatically after the annealing process. The characteristic of high infrared absorption and annealing-insensitivity is attributed to both the high-aspect-ratio structure and the phosphor-doped low impedance silicon. These results are important for the fabrication of highly efficient optoelectronic devices.

[1]  E. Mazur,et al.  Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses , 2001, CLEO 2001.

[2]  E. Mazur,et al.  MICROSTRUCTURING OF SILICON WITH FEMTOSECOND LASER PULSES , 1998 .

[3]  Optimal proportional relation between laser power and pulse number for the fabrication of surface-microstructured silicon. , 2011, Applied optics.

[4]  Ming Zhou,et al.  Superhydrophobic surfaces prepared by microstructuring of silicon using a femtosecond laser. , 2006, Langmuir : the ACS journal of surfaces and colloids.

[5]  M. Aziz,et al.  Strong Sub-band-gap Infrared Absorption in Silicon Supersaturated with Sulfur , 2006 .

[6]  Costas Fotakis,et al.  Biomimetic Artificial Surfaces Quantitatively Reproduce the Water Repellency of a Lotus Leaf , 2008 .

[7]  Yiming Zhu,et al.  Influence of Femtosecond Laser Pulse Number on Spike Geometry of Microstructured Silicon , 2013 .

[8]  Differences in the evolution of surface-microstructured silicon fabricated by femtosecond laser pulses with different wavelength. , 2012, Applied optics.

[9]  J. Si,et al.  Luminescence of black silicon fabricated by high-repetition rate femtosecond laser pulses , 2011 .

[10]  M. Sentis,et al.  Femtosecond laser for black silicon and photovoltaic cells , 2008, SPIE LASE.

[11]  R. Brendel,et al.  Structural changes in porous silicon during annealing , 2003 .

[12]  E. Mazur,et al.  Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation , 2004 .

[13]  M. Sentis,et al.  Femtosecond laser texturization for improvement of photovoltaic cells : black silicon , 2010 .

[14]  Eric Mazur,et al.  Silicon Surface Morphologies after Femtosecond Laser Irradiation , 2006 .

[15]  Hironaru Murakami,et al.  Imaging of a Polycrystalline Silicon Solar Cell Using a Laser Terahertz Emission Microscope , 2012 .

[16]  J. Si,et al.  An alternative approach for femtosecond laser induced black silicon in ambient air , 2012 .

[17]  Eric Mazur,et al.  Role of the Background Gas in the Morphology and Optical Properties of Laser-Microstructured Silicon , 2005 .

[18]  Tarik Bourouina,et al.  On the optical and morphological properties of microstructured Black Silicon obtained by cryogenic-enhanced plasma reactive ion etching , 2013 .

[19]  W.G.J.H.M. van Sark,et al.  Upconverter solar cells: materials and applications , 2011 .

[20]  Seeram Ramakrishna,et al.  Anti-reflective coatings: A critical, in-depth review , 2011 .

[21]  Scott Ward,et al.  Nanostructured black silicon and the optical reflectance of graded-density surfaces , 2009 .

[22]  Ernst-Bernhard Kley,et al.  Terahertz emission from black silicon , 2008 .

[23]  T. Buonassisi,et al.  Deactivation of metastable single-crystal silicon hyperdoped with sulfur , 2013 .