论文信息 - Room temperature operation of a quantum-dot flash memory

Room temperature operation of a quantum-dot flash memory

A flash-memory device has been fabricated and demonstrated at room temperature by coupling a self-aligned, sub-50-nm quantum dot to the channel of a transistor on a silicon-on-insulator (SOI) substrate. Large threshold voltage shifts of up to 0.75 V are obtained for small erase/write voltages (13 V) at room temperature. At 90 K, evidence of single electron storage is observed. The small size of this device is attractive for achieving high packing densities, while the relatively large output current (100 nA-/spl mu/A's), low off-state current (10 pA), and simple fabrication, requiring only minor variations in standard processing, make it suitable for integration with current silicon memory and logic technology.

[1] Sandip Tiwari,et al. Volatile and non-volatile memories in silicon with nano-crystal storage , 1995, Proceedings of International Electron Devices Meeting.

[2] H. Namatsu,et al. Conductance oscillations of a Si single electron transistor at room temperature , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[3] Ralph,et al. Spectroscopic measurements of discrete electronic states in single metal particles. , 1995, Physical review letters.

[4] Kazuo Yano,et al. A room-temperature single-electron memory device using fine-grain polycrystalline silicon , 1993, Proceedings of IEEE International Electron Devices Meeting.

[5] T. Ohshima,et al. Operation of bistable phase‐locked single‐electron tunneling logic elements , 1996 .

[6] Counter‐oxidation of superficial Si in single‐crystalline Si on SiO2 structure , 1994 .

[7] Sandip Tiwari,et al. Single charge and confinement effects in nano-crystal memories , 1996 .

[8] John R. Tucker,et al. Complementary digital logic based on the ``Coulomb blockade'' , 1992 .