Defects-induced oxidation of two-dimensional β-In2S3 and its optoelectronic properties
暂无分享,去创建一个
[1] Wei Gao,et al. An asymmetric contact-induced self-powered 2D In2S3 photodetector towards high-sensitivity and fast-response. , 2020, Nanoscale.
[2] Jijun Zhao,et al. Oxidation Behaviors of Two‐dimensional Metal Chalcogenides , 2020 .
[3] Xiufang Zhang,et al. Fabrication of In2O3/In2S3 microsphere heterostructures for efficient and stable photocatalytic nitrogen fixation , 2019, Applied Catalysis B: Environmental.
[4] W. Gao,et al. Epitaxial growth of large-scale In2S3 nanoflakes and the construction of a high performance In2S3/Si photodetector , 2019, Journal of Materials Chemistry C.
[5] G. Duesberg,et al. Defect-moderated oxidative etching of MoS2 , 2019, Journal of Applied Physics.
[6] J. Hao,et al. Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications , 2019, Advanced Materials Technologies.
[7] N. G. Kalugin,et al. Role of humidity in oxidation of ultrathin GaSe , 2019, Materials Research Express.
[8] Y. Bando,et al. Emerging in‐plane anisotropic two‐dimensional materials , 2019, InfoMat.
[9] Xiaoqing Chen,et al. Design strategies for two‐dimensional material photodetectors to enhance device performance , 2019, InfoMat.
[10] Li Shi,et al. Recent advances in oxidation and degradation mechanisms of ultrathin 2D materials under ambient conditions and their passivation strategies , 2019, Journal of Materials Chemistry A.
[11] L. Vaillant,et al. Study of the Oxidation Process of Crystalline Powder of In2S3 and Thin Films Obtained by Dr Blade Method , 2018, Journal of Electronic Materials.
[12] L. Yin,et al. 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection. , 2018, Chemical Society reviews.
[13] Jinlan Wang,et al. Effect of illumination and Se vacancies on fast oxidation of ultrathin gallium selenide. , 2018, Nanoscale.
[14] A. Davydov,et al. Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors , 2018, Scientific Reports.
[15] Licheng Sun,et al. Atomically Thin Mesoporous In2O3–x/In2S3 Lateral Heterostructures Enabling Robust Broadband‐Light Photo‐Electrochemical Water Splitting , 2018 .
[16] K. Zhou,et al. Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe , 2017, 1712.04662.
[17] Jijun Zhao,et al. Defects and oxidation of group-III monochalcogenide monolayers. , 2017, The Journal of chemical physics.
[18] D. Zahn,et al. GaSe oxidation in air: from bulk to monolayers , 2017 .
[19] Tianyou Zhai,et al. Controlled Synthesis of Ultrathin 2D β‐In2S3 with Broadband Photoresponse by Chemical Vapor Deposition , 2017 .
[20] P. Chiu,et al. High-Mobility InSe Transistors: The Role of Surface Oxides. , 2017, ACS nano.
[21] Qiyuan He,et al. Recent Advances in Ultrathin Two-Dimensional Nanomaterials. , 2017, Chemical reviews.
[22] H. Nan,et al. Improving the electrical performance of MoS2 by mild oxygen plasma treatment , 2017 .
[23] R. Leonelli,et al. Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy , 2016, 1612.06907.
[24] Liang Li,et al. Ternary Ta2NiSe5 Flakes for a High‐Performance Infrared Photodetector , 2016 .
[25] Chin Sheng Chua,et al. Integration of p-type β-In2S3 thin films on III-nitride heterostructures for multiple functional applications , 2016 .
[26] Fan Ye,et al. Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions. , 2016, Small.
[27] Yeonwoong Jung,et al. Two-dimensional lateral heterojunction through bandgap engineering of MoS2 via oxygen plasma , 2016, Journal of physics. Condensed matter : an Institute of Physics journal.
[28] C. Ho,et al. Synthesis of In2S3 and Ga2S3 crystals for oxygen sensing and UV photodetection , 2016 .
[29] T. Zhai,et al. 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics , 2016 .
[30] Wenxia Liu,et al. Tuning photocatalytic activity of In2S3 broadband spectrum photocatalyst based on morphology , 2016 .
[31] Richard Martel,et al. Photooxidation and quantum confinement effects in exfoliated black phosphorus. , 2015, Nature materials.
[32] Yubing Zhou,et al. Strong Second-Harmonic Generation in Atomic Layered GaSe. , 2015, Journal of the American Chemical Society.
[33] R. Wallace,et al. Surface oxidation energetics and kinetics on MoS2 monolayer , 2015 .
[34] F. Léonard,et al. Superlinear composition-dependent photocurrent in CVD-grown monolayer MoS2(1-x)Se2x alloy devices. , 2015, Nano letters.
[35] Kenji Watanabe,et al. Electronic transport of encapsulated graphene and WSe2 devices fabricated by pick-up of prepatterned hBN. , 2015, Nano letters.
[36] G. Wiederrecht,et al. Photoexcited Carrier Dynamics of Cu2S Thin Films. , 2014, The journal of physical chemistry letters.
[37] L. Lauhon,et al. Effective passivation of exfoliated black phosphorus transistors against ambient degradation. , 2014, Nano letters.
[38] Jinlan Wang,et al. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering , 2014, Nature Communications.
[39] M. Grundmann,et al. Raman active phonon modes of cubic In2O3 , 2014 .
[40] F. Miao,et al. Hopping transport through defect-induced localized states in molybdenum disulphide , 2013, Nature Communications.
[41] C. D. Kartha,et al. Modification of the optoelectronic properties of sprayed In2S3 thin films by indium diffusion for application as buffer layer in CZTS based solar cell , 2013 .
[42] C. Ho,et al. The study of surface photoconductive response in indium sulfide crystals , 2010 .
[43] Ching-Hwa Ho,et al. Growth and characterization of near-band-edge transitions in β-In2S3 single crystals , 2010 .
[44] C. H. Li,et al. Temperature-dependent photoconductivity in β-In2S3 single crystals , 2010 .
[45] R. Egdell,et al. Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3 , 2009 .
[46] Daniel Lincot,et al. High‐efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD) , 2003 .
[47] N. Barreau,et al. Study of low temperature elaborated tailored optical band gap β-In2S3−3xO3x thin films , 2002 .
[48] W. Stickle,et al. Handbook of X-Ray Photoelectron Spectroscopy , 1992 .
[49] R. Nitsche,et al. Vapour growth of three In2S3 modifications by iodine transport , 1975 .
[50] G. Harbeke,et al. On the conduction mechanism in single crystal β-indium sulfide In2S3 , 1965 .