Characterization of thin boron‐doped silicon membranes by double‐crystal x‐ray topography

Heavily boron‐doped silicon transparent membranes and x‐ray masks were examined using double‐crystal x‐ray topography. The topographs revealed the strain distribution in two dimensional (2D) pattern. Slip bands and Frank–Read sources were observed. The stress variation across the membrane was confirmed using the Stoney’s stress analysis by laser beam reflecting technique. Surface strain versus bulk strain were also analyzed by choosing (224) and (115) reflecting planes. Deposition of patterns on a bare membrane did not alter the overall strain pattern of the membrane, which was apparently determined by the warpage of the silicon supporting ring. Local deformations associated with gold absorber features were visible and their associated strain fields were measured.