A 60 GHz wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for dielectric spectroscopy

This paper presents the design, implementation, layout and measured results of a single stage 60 GHz Variable Gain Amplifier (VGA). The VGA has been implemented in 0.13 µm SiGe BiCMOS technology with ft/fmax = 250/340 GHz. It provides a tunable gain of −15 to 7 dB. The circuit consumes 32.25 mW of power from 2.5 V supply. It occupies an area of 0.6 mm2 and it is intended to be deployed in miniaturized dielectric sensing applications.

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