A 78 $\sim$ 102 GHz Front-End Receiver in 90 nm CMOS Technology

In this letter, a 78 ~ 102 GHz front-end receiver designed in 90 nm CMOS technology is presented. It consists of an ultra-wideband low-noise amplifier, a subharmonic mixer, and an IF buffer. This receiver has a peak gain of 11.8 dB at 94 GHz with the noise figure of 13.4 dB. The measured input-referred 1 dB compression point is -14.5 dBm and the total power dissipation is 18.6 mW. The chip size is 680 × 1020 μm2.

[1]  Hong-Yeh Chang,et al.  A 60GHz Low-Power Six-Port Transceiver for Gigabit Software-Defined Transceiver Applications , 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[2]  R.W. Brodersen,et al.  Design of CMOS for 60GHz applications , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[3]  Ali M. Niknejad,et al.  A Highly Integrated 60GHz CMOS Front-End Receiver , 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[4]  Sorin P. Voinigescu,et al.  A 95GHz Receiver with Fundamental-Frequency VCO and Static Frequency Divider in 65nm Digital CMOS , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[5]  B. Razavi,et al.  A 60-GHz CMOS receiver front-end , 2006, IEEE Journal of Solid-State Circuits.

[6]  M.T. Yang,et al.  60-GHz PA and LNA in 90-nm RF-CMOS , 2006, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006.

[7]  Jeng-Han Tsai,et al.  A 86 to 108 GHz Amplifier in 90 nm CMOS , 2008, IEEE Microwave and Wireless Components Letters.

[8]  Behzad Razavi,et al.  A mm-Wave CMOS Heterodyne Receiver with On-Chip LO and Divider , 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[9]  R. Brodersen,et al.  Design of CMOS for 60 GHz Applications , 2003 .

[10]  P. Garcia,et al.  A Wideband W-Band Receiver Front-End in 65-nm CMOS , 2008, IEEE Journal of Solid-State Circuits.

[11]  S.P. Voinigescu,et al.  A 1.2V, 60-GHz radio receiver with on-chip transformers and inductors in 90-nm CMOS , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.