Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devices

The effect of 950 degrees C low-pressure (0.01- or 0.1-atm) nitridation and low-pressure reoxidation on the electrical properties of thin (12-nm) silicon dioxide films for scaled MOS devices was studied. Turnarounds in fixed positive charge, interface state density, electron trapping, and interface state generation under electrical stress were observed with increasing nitridation. Compare to atmospheric nitridations, the turnarounds occur more gradually in the case of low-pressure nitridation. Low-pressure nitrides oxides also differ from atmospheric nitrided oxides in that a suppression of interface state generation is not normally seen. However, low-pressure nitridation and subsequent reoxidation greatly improves reliability. These attributes in the preturnaround regime of the low-pressure nitridation/reoxidation process were used to optimise the electrical properties of the dielectric. >

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