Electrical Properties Of Nitrogen Doped Amorphous Carbon Films Fromethanol Precursor

The nitrogen doped amorphous carbon (a-C:N) thin films were synthesized for the first time by using mixing of nitrogen gas, argon and ethanol precursor by bias assisted pyrolysis-CVD in the range of 250 o C to 550 o C with fixed negative bias of -50V in 1h deposition. The a-C:Nthin films were characterized by current-voltage measurement, UV/VIS spectrophotometer, surface profiler, and atomic force microscopy. The resistivity of a-C:N thin films in the range 250 o C-550 o

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