论文信息 - Quantum states interaction in hot carriers accumulation and stimulated emission processes in p-Ge

Quantum states interaction in hot carriers accumulation and stimulated emission processes in p-Ge

The role of quantum effects determined by interaction and mixing of light and heavy hole states in the scattering processes and population inversion of hot carriers in Ge in crossed E perpendicular to H fields is studied. The results of experimental investigations of stimulated emission for intersubband and cyclotron transitions are presented, the experimental data being in good agreement with quantum model calculations.

S A Stoklitskiy

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