Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode

We wish to report on the successful fabrication of submicrometre channel length (0.75 μm) and gate length (0.15 μm) vertical electron transistors with AlGaAs cathodes. Lack of electron velocity enhancement has been proposed to be due to high operating channel temperatures, and low temperature measurements were hindered by carrier freeze-out.