论文信息 - Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology - 字舞流文

Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology

Tianchun Ye | Chao Zhao | Jing Xu | Jun Luo | Chunlong Li | Jiang Yan | Guilei Wang | Tao Yang | Jinjuan Xiang | Gaobo Xu | Dapeng Chen | Junfeng Li | Tianchun Ye | Jun Luo | Jianfeng Gao | Guilei Wang | Junfeng Li | Jiang Yan | Chao Zhao | Dapeng Chen | Tao Yang | J. Xiang | Chunlong Li | Qiang Xu | Qiang Xu | Jing Xu