Dynamic pull-in and snap-through behavior in micro/nano mechanical memories considering squeeze film damping

In this paper, a model for considering the effect of squeeze film damping in electrostatically-actuated micro/nano curved-beams is developed. Micro/nano curved-beams have a wide range of applications including micro/nano mechanical memories and RF resonators. In our model, effects of ambient pressure, air gap and different physical parameters on pull-in voltages and snap-through voltages are considered. Pull-in instability and snap-through buckling, the two most important phenomena in bistable MEMS/NEMS, are investigated extensively. Here, squeeze film damping is modeled by nonlinear Reynolds equation, and the curved beam is modeled by nonlinear curved form of Euler–Bernoulli (E–B) beam equation. Afterward, the dynamic response of the system is investigated by finite element method (FEM). Finally, the results are compared with two dimensional equivalent form of E–B beam, and classical plate theory (CPT). The results are very beneficial in bistable MEMS/NEMS design.

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