论文信息 - Preparation and electrical properties of sol–gel derived (1−x)Pb(Sc1/2Nb1/2)O3−xPbTiO3 (x=0.6) thin films - 字舞流文

Preparation and electrical properties of sol–gel derived (1−x)Pb(Sc1/2Nb1/2)O3−xPbTiO3 (x=0.6) thin films

Woong Kil Choo | B. Kuh | W. Choo | B. J Kuh

[1] S. Trolier-McKinstry,et al. Orientation dependence of fatigue behavior in relaxor ferroelectric–PbTiO3 thin films , 2000 .

[2] S. Leppävuori,et al. Dielectric properties of pulsed laser deposited films of PbMg1/3Nb2/3–PbTiO3 and PbSc1/2Nb1/2O3–PbTiO3 relaxor ferroelectrics , 1999 .

[3] Igor Stolichnov,et al. Top-interface-controlled switching and fatigue endurance of (Pb,La)(Zr,Ti)O3 ferroelectric capacitors , 1999 .

[4] N. Setter,et al. Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films , 1998 .

[5] P. Gaucher,et al. Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film: Influence of the sol-gel process and the substrate , 1998 .

[6] A. Bhalla,et al. High strain and low mechanical quality factor piezoelectric Pb[(Sc1/2Nb1/2)0,575Ti0.425]O3 ceramics , 1998 .

[7] Y. Yamashita,et al. Improved Ferroelectric Properties of Niobium-Doped Pb[(Sc1/2Nb1/2)Ti]O3 Ceramic Material , 1993 .