TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction

We present TCAD simulations based on advanced mobility modeling including Surface Roughness (SR) and Remote Coulomb Scattering (RCS) effects, quantum correction and short channel effects. From these calibrated models, FDSOI 6T-SRAM cells are simulated and compared to experimental data. The very good agreement achieved between simulations and electrical data on both mobility and electrical figures of merit (device and SRAM) offers major opportunities for predictive design based on TCAD simulations.

[1]  G. Ghibaudo,et al.  Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling , 2006, 2006 International Electron Devices Meeting.

[2]  X. Garros,et al.  New insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology , 2010, 2010 Symposium on VLSI Technology.

[3]  Ching-Te Chuang,et al.  Stable high-density FD/SOI SRAM with selective back-gate bias using dual buried oxide , 2008, 2008 IEEE International SOI Conference.

[4]  Giuseppe Iannaccone,et al.  Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport , 2004 .

[5]  S. Takagi,et al.  On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration , 1994 .

[6]  A. Toffoli,et al.  Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond , 2010, 2010 Symposium on VLSI Technology.

[7]  D. Sharma,et al.  Highly robust nanoscale planar double-gate MOSFET device and SRAM cell immune to gate-misalignment and process variations , 2009, 2009 2nd International Workshop on Electron Devices and Semiconductor Technology.

[8]  Shimeng Yu,et al.  The impact of line edge roughness on the stability of a FinFET SRAM , 2009 .

[9]  M. Cassé,et al.  The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility , 2008 .

[10]  G. Reimbold,et al.  Influence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETs , 2005 .

[11]  Massimo Vanzi,et al.  A physically based mobility model for numerical simulation of nonplanar devices , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..