A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory
暂无分享,去创建一个
M. R. Uddin | D. Seo | I. Yoo | U. Chung | Myoung-Jae Lee | Dongsoo Lee | J. Hur | Young-soo Park | Seongho Cho | Moon-seung Yang | E. Hwang | Sunghun Lee | Hojung Kim | Sang-Moon Lee | Dong-Sik Kim
[1] Dimensionality effects in chalcogenide-based devices , 2013 .
[2] K. Gopalakrishnan,et al. Large-scale (512kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield , 2012, 2012 Symposium on VLSI Technology (VLSIT).
[3] Jong-Ho Lee,et al. Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory , 2012 .
[4] I. Yoo,et al. A simple device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory. , 2011, ACS applied materials & interfaces.
[5] H. Hwang,et al. Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications , 2011, IEEE Electron Device Letters.
[6] Kinam Kim,et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.
[7] B. Hoefflinger. ITRS: The International Technology Roadmap for Semiconductors , 2011 .
[8] L. Cario,et al. Electric‐Field‐Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories , 2010, Advanced materials.
[9] Cheol Seong Hwang,et al. A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays , 2010, Nanotechnology.
[10] Rainer Waser,et al. Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.
[11] Gregory S. Snider,et al. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication , 2010, Nature.
[12] J. Yang,et al. A Family of Electronically Reconfigurable Nanodevices , 2009 .
[13] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[14] S. Kostylev. Threshold and Filament Current Densities in Chalcogenide-Based Switches and Phase-Change-Memory Devices , 2009, IEEE Electron Device Letters.
[15] D. Stewart,et al. The missing memristor found , 2009, Nature.
[16] Jung-Hyun Lee,et al. Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. , 2009, Nano letters.
[17] Victor G. Karpov,et al. Field-induced nucleation in phase change memory , 2008 .
[18] A. Pirovano,et al. Threshold switching and phase transition numerical models for phase change memory simulations , 2008 .
[19] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[20] Daniele Ielmini,et al. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices , 2007 .
[21] I. Karpov,et al. Nucleation switching in phase change memory , 2007 .
[22] S. H. Jeon,et al. A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories , 2007 .
[23] J. Kim,et al. Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology , 2006, 2006 International Electron Devices Meeting.
[24] Guorong Chen,et al. Role of nitrogen in the crystallization of silicon nitride-doped chalcogenide glasses , 2004 .
[25] S. O. Park,et al. Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[26] S. Seo,et al. Reproducible resistance switching in polycrystalline NiO films , 2004 .
[27] S. Q. Liu,et al. Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .
[28] J. J. Cheng,et al. Raman spectra of Ge-Si-As-Se-Te-N chalconitride glasses , 1997 .
[29] Sir Nevill Mott,et al. The mechanism of threshold switching in amorphous alloys , 1978 .
[30] D. Adler,et al. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors , 1976 .
[31] N. Mott,et al. Metallic and nonmetallic behavior in transition metal oxides. , 1970, Science.
[32] S. Ovshinsky. Reversible Electrical Switching Phenomena in Disordered Structures , 1968 .