Determination of the deformation potentials of GaAs0.80P0.20

Deformation potentials can be determined by measuring the variation of the energy of the electronic transitions with strain. In this work, the hydrostatic and shear potentials of the band‐gap electronic transition (E0) and the transitions along the 〈111〉 direction (E1) of GaAs1−xPx, x≊0.20, have been determined by electroreflectance characterization of GaAs1−xPx layers with different levels of strain.